Test of Ultra Fast Silicon Detectors for Picosecond Time Measurements with a New Multipurpose Read-Out Board

摘要

Ultra Fast Silicon Detectors (UFSD) are sensors optimized for timingmeasurements employing a thin multiplication layer to increase the outputsignal. A multipurpose read-out board hosting a low-cost, low-power fastamplifier was designed at the University of Kansas and tested at the EuropeanOrganization for Nuclear Research (CERN) using a 180 GeV pion beam. Theamplifier has been designed to read out a wide range of detectors and it wasoptimized in this test for the UFSD output signal. In this paper we report theresults of the experimental tests using 50 $\rm{\mu m}$ thick UFSD with asensitive area of 1.4 $\rm{mm^2}$. A timing precision below 30 ps was achieved.